Free Course Image Electronics - Nanoelectronics: Devices and Materials

Free online courseElectronics - Nanoelectronics: Devices and Materials

Duration of the online course: 40 hours and 15 minutes

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Boost your electronics career with a free nanoelectronics course on MOSFETs, CMOS scaling, materials, and nanodevices—learn fast, with practical quizzes.

In this free course, learn about

  • Goals and scope of nanoelectronics devices, scaling trends, and why new materials are introduced
  • MOSFET short-channel effects, reverse short-channel effect, and narrow-width effect in CMOS
  • Impact of substrate doping on subthreshold slope, threshold voltage, and nanometer-regime drawbacks
  • Why SiO2 is a great gate insulator and how high-k dielectrics reduce direct tunneling current
  • Metal vs polysilicon gates: motivation, work-function/compatibility issues, and scaling implications
  • Role of fluorine-doped SiO2 and interface traps; hysteresis behavior in MOS capacitors
  • MOS capacitor C–V at high frequency; inversion capacitance changes and ideal capacitor trends
  • Key MOSFET equations: Idsat, performance limits, and subthreshold swing in nano MOSFETs
  • High-field transport and velocity saturation; why velocity doesn’t grow as classically expected
  • SOI MOSFETs: injection velocity control, fully depleted behavior, and operation vs bulk MOSFETs
  • Contact scaling: shift to metal source/drain, Schottky/ohmic contacts, and ideal barrier height
  • Using Ge and III–V (GaAs, InP) in MOS: required interface quality and performance advantages
  • Nanostructures/nanosystems definitions; basic quantum ideas incl. Schrödinger equation and bands
  • Nanocrystal growth stabilization, nanoparticle synthesis methods, and Bragg equation for diffraction

Course Description

Miniaturization changed everything in electronics: once devices reached the nanometer scale, the rules that made classical MOS technology so successful started to bend. This free online course helps you understand what happens inside modern transistors when dimensions shrink, why new materials became essential, and how device design evolved to keep performance, power, and reliability under control. It is an ideal fit if you want to strengthen professional skills relevant to electricians, technicians, and anyone working around semiconductor-based systems.

You will connect fundamentals to real engineering trade-offs, building intuition about effects that appear as channels become extremely short and electric fields grow intense. The course explores how scaling influences threshold voltage, subthreshold behavior, saturation current, and leakage mechanisms, and why issues such as direct tunneling current forced industry-level changes in gate stacks and insulating layers. By linking MOS capacitors to MOSFET behavior, you develop a clearer picture of how capacitance, doping, interface traps, and frequency response impact switching and overall device operation.

Another focus is the role of materials and structures that replaced or complemented traditional silicon approaches. You will learn why choices like high-k dielectrics, alternative gate concepts, and specific doped oxides matter in CMOS technology, and how metal-semiconductor contacts affect real device performance. The course also introduces key ideas behind SOI MOSFETs, including what fully depleted operation means and how injection velocity and operating modes differ from bulk devices—knowledge that helps explain why certain architectures are preferred for advanced nodes.

As the course moves further into nanoelectronics, it bridges device engineering with the basics of nanosystems and quantum-aware thinking. Without requiring an advanced physics background, you encounter the purpose of foundational models, how band concepts relate to electronic behavior in crystals, and why nanostructures demand careful fabrication and characterization choices. Short checks for understanding throughout reinforce the most important concepts, so you finish with confidence to discuss nanoelectronics devices and materials in academic, lab, or industry conversations.

Course content

  • Video class: Electronics Nanoelectronics Devices and Materials mod01lec01 59m
  • Exercise: What is the primary focus of the nanoelectronics course?
  • Video class: Electronics Nanoelectronics Devices and Materials mod02lec02 1h00m
  • Exercise: What was one of the reasons for introducing new materials in silicon chips?
  • Video class: Electronics Nanoelectronics Devices and Materials mod02lec03 59m
  • Exercise: _What is the short channel effect in a MOS transistor?
  • Video class: Electronics Nanoelectronics Devices and Materials mod02lec04 59m
  • Exercise: What are the two main isolation techniques in CMOS technology discussed, and how do they impact the narrow width effect?
  • Video class: Electronics Nanoelectronics Devices and Materials mod02lec05 57m
  • Exercise: _What is the effect of increasing substrate doping on sub threshold slope?
  • Video class: Electronics Nanoelectronics Devices and Materials mod03lec06 58m
  • Exercise: What is a potential downside of increased doping concentration in nanometer regime transistors?
  • Video class: Electronics Nanoelectronics Devices and Materials mod03lec07 58m
  • Exercise: _What is the reverse short channel effect in a transistor?
  • Video class: Electronics Nanoelectronics Devices and Materials mod03lec08 59m
  • Exercise: What is the primary advantage of silicon oxide as an insulator in transistors?
  • Video class: Electronics Nanoelectronics Devices and Materials mod03lec09 59m
  • Exercise: _What is the solution to overcome the problem of direct tunneling current in MOS transistors?
  • Video class: Electronics Nanoelectronics Devices and Materials mod03lec10 54m
  • Exercise: What is a primary reason for transitioning from metal gate to polysilicon gate in transistors?
  • Video class: Electronics Nanoelectronics Devices and Materials mod03lec11 59m
  • Exercise: What is the significance of using fluorine-doped silicon oxide in CMOS technology?
  • Video class: Electronics Nanoelectronics Devices and Materials mod04lec12 58m
  • Exercise: What is the effect of high frequency on the MOS capacitor's inversion capacitance?
  • Video class: Electronics Nanoelectronics Devices and Materials mod04lec13 59m
  • Exercise: _What happens to the threshold voltage and inversion capacitance when substrate doping concentration is increased while keeping the oxide thickness constant in an ideal capacitor?
  • Video class: Electronics Nanoelectronics Devices and Materials mod04lec14 1h09m
  • Exercise: What type of hysteresis occurs with slow interface traps in MOS capacitors?
  • Video class: Electronics Nanoelectronics Devices and Materials mod04lec15 53m
  • Exercise: _What is the saturation current value (Idsat) of a field effect transistor?
  • Video class: Electronics Nanoelectronics Devices and Materials mod05lec16 53m
  • Exercise: What is the primary factor determining the performance of classical MOSFETs?
  • Video class: Electronics Nanoelectronics Devices and Materials mod05lec17 57m
  • Exercise: _What is the sub threshold slope or sub threshold swing in a nano MOSFET?
  • Video class: Electronics Nanoelectronics Devices and Materials mod05lec18 59m
  • Exercise: What principle explains unmet velocity expectations in high electric fields?
  • Video class: Electronics Nanoelectronics Devices and Materials mod06lec19 59m
  • Exercise: _What is the factor that controls the injection velocity in SOI MOSFETs?
  • Video class: Electronics Nanoelectronics Devices and Materials mod06lec20 59m
  • Exercise: What is a key characteristic of a fully depleted SOI MOSFET?
  • Video class: Electronics Nanoelectronics Devices and Materials mod06lec21 1h00m
  • Exercise: _What are the different modes of operation in the case of SOI compared to bulk MOSFET?
  • Video class: Electronics Nanoelectronics Devices and Materials mod06lec22 59m
  • Video class: Electronics Nanoelectronics Devices and Materials mod07lec23 59m
  • Exercise: _What is the reason for the change from conventional p-n junction to metal source drain junctions in small scale or nano scale MOSFETs?
  • Video class: Electronics Nanoelectronics Devices and Materials mod07lec24 59m
  • Video class: Electronics Nanoelectronics Devices and Materials mod07lec25 59m
  • Exercise: _What is the ideal barrier height for an ohmic contact on an n-type material in metal-semiconductor contacts?
  • Video class: Electronics Nanoelectronics Devices and Materials mod08lec26 58m
  • Video class: Electronics Nanoelectronics Devices and Materials mod08lec27 59m
  • Exercise: _What is the most important thing required for using Germanium for MOS devices?
  • Video class: Electronics Nanoelectronics Devices and Materials mod08lec28 59m
  • Video class: Electronics Nanoelectronics Devices and Materials mod08lec29 59m
  • Exercise: _What is the benefit of using gallium arsenide and indium phosphide devices over silicon devices?
  • Video class: Electronics Nanoelectronics Devices and Materials mod08lec30 1h03m
  • Video class: Electronics Nanoelectronics Devices and Materials mod09lec31 1h00m
  • Exercise: _What is the definition of nanostructures or nanosystems?
  • Video class: Electronics Nanoelectronics Devices and Materials mod10lec32 52m
  • Video class: Electronics Nanoelectronics Devices and Materials mod10lec33 55m
  • Exercise: _What is the Schrodinger equation?
  • Video class: Electronics Nanoelectronics Devices and Materials mod10lec34 55m
  • Video class: Electronics Nanoelectronics Devices and Materials mod10lec35 57m
  • Exercise: _What is the energy width of the bands representing the outer core or valence electrons in a crystal?
  • Video class: Electronics Nanoelectronics Devices and Materials mod11lec36 56m
  • Video class: Electronics Nanoelectronics Devices and Materials mod11lec37 57m
  • Exercise: _What is the purpose of polymer stabilizers in the growth of nanocrystals of metals and semiconductors?
  • Video class: Electronics Nanoelectronics Devices and Materials mod11lec38 55m
  • Video class: Electronics Nanoelectronics Devices and Materials mod12lec39 57m
  • Exercise: _What are some physical methods that can be used for producing nanoparticles and nanostructures?
  • Video class: Electronics Nanoelectronics Devices and Materials mod12lec40 53m
  • Video class: Electronics Nanoelectronics Devices and Materials mod13lec41 1h16m
  • Exercise: _What is the Bragg equation used for in external diffraction?

This free course includes:

40 hours and 15 minutes of online video course

Digital certificate of course completion (Free)

Exercises to train your knowledge

100% free, from content to certificate

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